Ballistic Transport means that carriers will travel faster than the average drift velocity or the saturation velocity, and this effect can lead to very fast device. Ballistic transport will occur in ( L < 1um ).
The frequency response of MOSFETs increases as the channel length decrease as shown in Fig 1.6,
Fig.1.2 shows the device circuit parameter as a function of the channel length. Table 1.3 illustrates the scaling factor k as a function of the circuit parameters. Typically, k ~ 0.7 per generation of a given technology.
Table 1.3 device circuit parameter as a function of the scaling factor.
Fig 1.2 History and trends of power-supply voltage (VDD ), threshold
voltage (Vt ), and gate-oxide thickness (tox) vs. channel length for
CMOS logic technologies.
